Are there any technical advantages that lateral mosfets have over BJTs
in audio amplifier design?
Do lateral mosfets offer lower theoretical THD+N over the entire audio
spectrum than BJTs for instance?
Lateral mosfets used individually without NFB have poorer THD (in
simplistic overall terms at full rated power ) than BJTs by a factor of
about 10:1. I measured it !
However their vastly wider bandwidth (combined with suitable driver
circuitry - which is very important) means that the extra 20dB of NFB to
compensate can be applied without any great trouble.
Then you get to the real crux, the crossover area where a lot of low
volume listening is done. Quite simply, the transfer characteristics of
complementary lateral mosfets 'join up' to form an almost flat function at
low current whereas BJTs never do regardless of the bias current and how
hard you try. There are some 'fudges' that can help BJTs but they never
actually eliminate the problem.
And that's why lateral mosfets sound superb.
As I may have said before I designed one with < -100dB SINAD @ full power
@ 1kHz @ 350W. I think with the more advanced CAD tools of today I could
better that now. All I had then was MathCad running under DOS.
Graham