For those who are interested in this topic, it may be of value to read this
document:
http://www.irf.com/technical-info/appnotes/an-986.pdf
In particular section III. "Experimental verification" under the
observations 1. and 3. will be of interest. Basically they claim standard
gate MOSFETs typically are destroyed around 70-80V, with logic level devices
around 45V-50V. Additionally, if gate avalanche currents are limited to a
very small level (IE: <100uA) the gates don't seem to be immediately
destroyed. I've seen this basic data also claimed in at least one other
document from International Rectifier, but unfortunately I can't remember
exactly what document that was in.
John's IRFPS37N50A 115V figure is entirely believable and probably not at
all unusual for MOSFETs with datasheet absolute maximum gate ratings of
+/-30V. For absolute maximum rated +/-20V devices, I would expect 80V
breakdown to be more typical.
Manufacturers benefit in more than one way by producing datasheets with very
conservative maximum gate voltage ratings. In particular, devices will
still be more reliable at lower gate voltage (especially over the long run),
and it will help to improve product yield. For example, if during the
manufacturing process a tiny fleck of dust were to land on a MOSFET while
the gate oxide is being grown, it would no doubt introduce a gate oxide
imperfection that would reduce the gate breakdown voltage (though not
necessarily enough to make the device useless). For example, suppose the
imperfection reduces the breakdown voltage from 80V down to 40V. The device
can still be sold if the datasheet specifies 20V abs. max voltage, but it
could not be sold if the datasheet specified 60V absolute max.
Additionally, there is essentially no benefit (in terms of on resistance or
maximum current handling ability) for driving MOSFET gates beyond 20V, or
even 15V for that matter, for typical MOSFETs (there are some that still
benefit a little, but most don't). For the most part the on resistance and
maximum current capability with Vgs at 10V is essentially very nearly as
good as it will get regardless of how high a voltage you apply.