Hi everyone,
I'm doing an automation project and am currently selecting the best (i.e. cheapest safe solution ) MOSFET for my application.
The FETs will be mounted on a PCB and will be connected directly to an ATmega328 mC. The connection to the drain will be on the low-side ( meaning the FET will connect the load to GND/source).
The largest load will be approx. 2.5-3.5Amps@12VDC. It will be an inductive load (a motor) and the FET protection has been thought of.
Would a IRL540 logic level MOSFET be a good choice?
Here's the datasheet ( http://www.bccomponents.nl/docs/91300/91300.pdf )
This Power MOSFET is in a TO-220 package, has a R DS (on) = 0.077 Ohm with a V GS = 5V and according to my calculations should have no problems whatsoever handling the task it will be performing (and I'll more or less be wasting its potential on the sub Amp loads). I used P = I (of the load)^2 * R DS (on) .
Thanks in advance
p.s. The only thing that puzzles me is that there are two Power Dissipation figures mentioned in the sheet - one is approx. 50W (for the TO-220 package, in the beginning of the datasheet) and the other is 150W as a Maximum power dissipation rating for the FET. How can the package the FET is IN dissipate much less than the FET itself? What do these values represent?
I'm doing an automation project and am currently selecting the best (i.e. cheapest safe solution ) MOSFET for my application.
The FETs will be mounted on a PCB and will be connected directly to an ATmega328 mC. The connection to the drain will be on the low-side ( meaning the FET will connect the load to GND/source).
The largest load will be approx. 2.5-3.5Amps@12VDC. It will be an inductive load (a motor) and the FET protection has been thought of.
Would a IRL540 logic level MOSFET be a good choice?
Here's the datasheet ( http://www.bccomponents.nl/docs/91300/91300.pdf )
This Power MOSFET is in a TO-220 package, has a R DS (on) = 0.077 Ohm with a V GS = 5V and according to my calculations should have no problems whatsoever handling the task it will be performing (and I'll more or less be wasting its potential on the sub Amp loads). I used P = I (of the load)^2 * R DS (on) .
Thanks in advance
p.s. The only thing that puzzles me is that there are two Power Dissipation figures mentioned in the sheet - one is approx. 50W (for the TO-220 package, in the beginning of the datasheet) and the other is 150W as a Maximum power dissipation rating for the FET. How can the package the FET is IN dissipate much less than the FET itself? What do these values represent?