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MOSFETs shooting through in H-bridge: damage at gate-source driving circuits

Hello,

In H-bridge, if gate-source driving signals of two MOSFETs on the left side of H-bridge are almost good, except only their phases, which are the same. Of course, the MOSFETs' drain-source junctions surely explode. But how about their gate-source driving circuits? If they are not opto-coupled, will there be a chance to breaking down?

Thank you
BlackMelon
 
Last edited:

Harald Kapp

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But how about their gate-source driving circuits? If they are not opto-coupled, will there be a chance to breaking down?
I don't think a general answer can be given here. It depends on the mechanism of breakdown of the transistors. If the gate-source is short-circuited in the course of the destruction of the transistor, chnaces are the driving circuit "sees" voltages it wasn't designed for and is accordingly damaged.
 
The file drive_drive.png is a MOSFET driver. There are two of them, which are completely isolated from each other. (There are two external square wave generators for each driver. The H-bridge comprising two MOSFETs and two diodes is in FlybackBridge.jpg
 

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  • FlybackBridge.jpg
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The circuit you show as FlybackBridge is a forward convertor... not flyback. I don't fully understand your question. Do you have a full circuit you can show?
Thanks
Adam
 
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