B
Bill Sloman
As I suggested, a couple of times, a dual one-shot (one chip) and a
NOR gate (one more) could do the job. One one-shot would be fixed at,
say, 100 ns, and the other would be adjusted from 110 to 260. The gate
takes the difference.
I could explain it in more detail if you don't get the concept.
It's not exactly a complicated idea. You wouldn't actually trim the
first one shot to 100nsec, you'd rely on the two one-shots on a single
substrate being more or less the same, and set up the first one for a
minimum pulse width - 2k to +5V and no capacitor - and set up the
second to cover the range from there - plus 10nnsec - out to about
300nsec.
I'd use a 74221, and program the pulse width on the second monostable
in the package with a current mirror delivering a constant but
adjustable (from about 2mA on down to perhaps 0.2mA or whatever - it's
a long time since I've done it) current into the Rext/Cext pin,
primarily to let me put the pot that programmed the pulse width a long
way from the 74221 generating the pulse without hanging a long aerial
on the Rext/Cext pin.
You could probably make the programming rheostat a 3-turn pot, with
each turn adding another 100nsec to the pulse width, and use an
auxiliary trim-pot to allow the range to start 10nsec. There'd
presumably be a op amp in there to convert the current being sunk into
the potentiometer into a current to be fed into the controlling side
of the current mirror.
There used to be application notes around that talked about doing
that, but I can't seem to find any of them
http://www2.elo.utfsm.cl/~lsb/elo211/datos/lacaja/74123.pdf
presents Nat. Semi.'s AN-366 from 1984, which is informative, but not
on that specific point.
http://www.fairchildsemi.com/an/AN/AN-138.pdf
shows the idea in action, but only on the CMOS version of the 221, and
there's no explanation of what's going on.