J
Jamie M
Hi,
This is related to the "poor mans superconductor wire" thread,
for testing an idea of anomalous resistance decrease in a diode.
If you reverse bias a diode, then electrons move closer to the
junction of the diode as the voltage pressure increases. I was
thinking maybe this biasing of the electric field will change the
electrical resistance on each side of the diode. Ie. if the actual
diode IC die is available to probe, reverse bias the diode, and then
put two probes on one side of the diode and measure the resistance
from two points on the anode-anode or cathode-cathode and see if the
resistance changes based on the level of reverse bias. Any ideas?
I was thinking about this in the case of topological insulators,
where with an infinite voltage breakdown diode, eventually it will
act as a topological insulator in this case and may then act as a
superconductor in this case.
cheers,
Jamie
This is related to the "poor mans superconductor wire" thread,
for testing an idea of anomalous resistance decrease in a diode.
If you reverse bias a diode, then electrons move closer to the
junction of the diode as the voltage pressure increases. I was
thinking maybe this biasing of the electric field will change the
electrical resistance on each side of the diode. Ie. if the actual
diode IC die is available to probe, reverse bias the diode, and then
put two probes on one side of the diode and measure the resistance
from two points on the anode-anode or cathode-cathode and see if the
resistance changes based on the level of reverse bias. Any ideas?
I was thinking about this in the case of topological insulators,
where with an infinite voltage breakdown diode, eventually it will
act as a topological insulator in this case and may then act as a
superconductor in this case.
cheers,
Jamie