Hi everyone,
*** Background ***
I started my first electronics project about 6 months ago and had to delve into the world of transistors to solve a few problems. Now my circuit is filled with MOSFETs acting as custom-designed logic switches and mini-relays for various functions (came up with a lot of cool new ideas).
The project has been on the shelf for a few months but now I am getting back on it.
One query I have is about pull-down resistors for the gates of my MOSFETs. As I understand, through both my own observations during prototyping and extensive Googling, applying a voltage to the gate and then taking the voltage supply away can--in layman's terms--leave some voltage 'stuck' at the gate which tricks the MOSFET in to staying active.
Adding a 'pull-down' resistor between the gate and ground can 'drain away' this 'stuck' voltage and restore proper operation.
*** Question ***
So the actual question is: do I have to use a separate pull-down resistor for each MOSFET or can I use a communal 'resisted ground' rail for these, with diodes on the bases?
To put what I mean in to pictures:-
Individual pull-down resistors:
One communal pull-down resistor on a rail:
The triggers are usually 12-14V and can be continuous sometimes for hours at a time so I want to minimise the current draw from grounding the triggers, hence the huge 10M resistors used which work in practice and only draw ~1mA through the 'short' created.
Can I go higher than 10M or will performance be sacrificed? If I have, say, 50 MOSFETs then that will be ~50mA that is just uselessly being shorted from +ve to gnd either through one communal resistor or through 50 individual resistors, so the lower I can get that figure the better.
Thanks for your time, and sorry if it's an easy question - I'm still learning
-VR
*** Background ***
I started my first electronics project about 6 months ago and had to delve into the world of transistors to solve a few problems. Now my circuit is filled with MOSFETs acting as custom-designed logic switches and mini-relays for various functions (came up with a lot of cool new ideas).
The project has been on the shelf for a few months but now I am getting back on it.
One query I have is about pull-down resistors for the gates of my MOSFETs. As I understand, through both my own observations during prototyping and extensive Googling, applying a voltage to the gate and then taking the voltage supply away can--in layman's terms--leave some voltage 'stuck' at the gate which tricks the MOSFET in to staying active.
Adding a 'pull-down' resistor between the gate and ground can 'drain away' this 'stuck' voltage and restore proper operation.
*** Question ***
So the actual question is: do I have to use a separate pull-down resistor for each MOSFET or can I use a communal 'resisted ground' rail for these, with diodes on the bases?
To put what I mean in to pictures:-
Individual pull-down resistors:

One communal pull-down resistor on a rail:

The triggers are usually 12-14V and can be continuous sometimes for hours at a time so I want to minimise the current draw from grounding the triggers, hence the huge 10M resistors used which work in practice and only draw ~1mA through the 'short' created.
Can I go higher than 10M or will performance be sacrificed? If I have, say, 50 MOSFETs then that will be ~50mA that is just uselessly being shorted from +ve to gnd either through one communal resistor or through 50 individual resistors, so the lower I can get that figure the better.
Thanks for your time, and sorry if it's an easy question - I'm still learning
-VR