HSPICE measuring mosfet model parameters

[[email protected]]

Hi,

I am using monte carlo mode simulation in HSPICE. I am varying the VT
and TOX for each of the tarnsistors. I am using MODMONTE=1 so that
HSPICE automatically assigns the different values of TOX and VT to
each transistor in the circuit. Is there anyway of measuring the what
value VT and TOX take in each loop of the iteration for each of the
mosfets? Or could I specify the parameters VT and TOX outside the
model statement like length and width?
Thanks in advance.


Regards,
Balaji.