I have some questions about pn junction:
1)Typical small signal model for a pn junction consists of a
conductance in parallel with a capacitor
conductance=(conductance p-neutral region)+(conductance n-neutral
region)+(conductance space charge region)
capacitor=(diffusion capacitor n-neutral region)+(diffusion capacitor
p-neutral region)+(junction capacitor)
I don't understand why these capacitors (and resistrors) that come
from three series layers are not in series but in parallel
1)What is the difference between zener diode and tunnel diode? These
two diodes are based on the same phenomena but first is used in
reverse bias and the second in foward bias,is it right?
2)I've found that is not possible obtain diode breakdown with tunnel
phenomena, but a lot of links said the contrary...This is true or not?
Thanks
1)Typical small signal model for a pn junction consists of a
conductance in parallel with a capacitor
conductance=(conductance p-neutral region)+(conductance n-neutral
region)+(conductance space charge region)
capacitor=(diffusion capacitor n-neutral region)+(diffusion capacitor
p-neutral region)+(junction capacitor)
I don't understand why these capacitors (and resistrors) that come
from three series layers are not in series but in parallel
1)What is the difference between zener diode and tunnel diode? These
two diodes are based on the same phenomena but first is used in
reverse bias and the second in foward bias,is it right?
2)I've found that is not possible obtain diode breakdown with tunnel
phenomena, but a lot of links said the contrary...This is true or not?
Thanks
