Hi Everyone,
I'm really stuck with this problem, any help or redirection would be seriously awesome.
I'm trying to make a TENS circuit and controlling it with a 5V signal. The NPN transistor I am using has a Base−Emitter On Voltage of 0.7V, and it gets very hot when I use it in this configuration:
so I used an N-Channel MOSFET with 3.5V - 5.5V gate threshold voltage as in the below configuration:
Now the MOSFET doesn't seem to overheat, but the shock I get from the electrodes when I hook the open poles up to my arm is barely noticeable.
I measured the Collector -> Emitter resistance as 40 ohms on the NPN transistor and the Drain -> source resistance on the N-channel MOSFET as 4 ohms so that made me think there should be less loss. Hence the overall outcome leaves me dumbfounded.
If anyone can help me understand what is going on here that would be amazing! Please let me know if there's any more detail I can give to help.
Cheers for the help,
Will
I'm really stuck with this problem, any help or redirection would be seriously awesome.
I'm trying to make a TENS circuit and controlling it with a 5V signal. The NPN transistor I am using has a Base−Emitter On Voltage of 0.7V, and it gets very hot when I use it in this configuration:
so I used an N-Channel MOSFET with 3.5V - 5.5V gate threshold voltage as in the below configuration:
Now the MOSFET doesn't seem to overheat, but the shock I get from the electrodes when I hook the open poles up to my arm is barely noticeable.
I measured the Collector -> Emitter resistance as 40 ohms on the NPN transistor and the Drain -> source resistance on the N-channel MOSFET as 4 ohms so that made me think there should be less loss. Hence the overall outcome leaves me dumbfounded.
If anyone can help me understand what is going on here that would be amazing! Please let me know if there's any more detail I can give to help.
Cheers for the help,
Will