Some of the NXP (and Renesas) MOSFETs in the LFPAK (SOT669) package
look quite attractive (low source inductance in particular appeals to
me) if I knew how to heatsink them to a significant portion of their
rated dissipation (typically ~50W). NXP's LFPAK thermal design
document discusses under-1-watt applications only. Has anyone any
clever ideas on how to get the heat out ?>
Not using bonding wires certainly gets the inductance down. But any
discussion of how to mount the part requires knowing the ambient
temperature. Since you are switching the FET, what is the duty cycle?
Does the "on" period exceed a millisecond? [Generally using PWM in
temperature analysis doesn't work if the on time is too long. For
instance, 1 day on and 10 days off isn't 10% duty cycle in the eyes of a
semiconductor.]
A lot of cheesy consumer grade products spec the maximum ambient at 40
degrees C because they figure if it is used in the presence of a person,
said person will get out of Dodge when the ambient exceeds 40. This is
really common for devices with displays.
BTW, there are plenty of places in the world where the ambient exceeds
40 degrees C!