I am reading "Fundamentals of Microelectronics" (second edition) and while I can "compute" the theoretical value of the reverse saturation current of a PN junction, IS, knowing the doping level and the physical dimensions.
Since that value occurs at many interesting places for a BJT, such as in the equation linking the collector current, IC, to VBE, through IS, which can determine with precision the value of the (theoretical) voltages (instead of assuming them to be, as example, 0.7 Volt of a forward biased junction ), my question is where, or probably, how do I get this value from a datasheet of a 2N2222 as example?
Since that value occurs at many interesting places for a BJT, such as in the equation linking the collector current, IC, to VBE, through IS, which can determine with precision the value of the (theoretical) voltages (instead of assuming them to be, as example, 0.7 Volt of a forward biased junction ), my question is where, or probably, how do I get this value from a datasheet of a 2N2222 as example?
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