S
spice3
The parameters of SOI NMOSFET I extracted can't simulate kink effect. The
real device is body tied. But it still has kink effect. so I want to
fabricate a macro model. I used a MOSFET and a BJT transistor. The
parasitical capacitor will be taken into account through the parameters of
MOSFET. But how to simulate the floating body? By default the voltage of
base electrode is zero if no bias added. Then the kink effect caused by Vt
enhancement still can't be simulated. How should I do ? Thanks!
real device is body tied. But it still has kink effect. so I want to
fabricate a macro model. I used a MOSFET and a BJT transistor. The
parasitical capacitor will be taken into account through the parameters of
MOSFET. But how to simulate the floating body? By default the voltage of
base electrode is zero if no bias added. Then the kink effect caused by Vt
enhancement still can't be simulated. How should I do ? Thanks!