This is a very tricky question for a junior member to ask so please forgive me for providing the solution. I hope the moderator will understand.
1. Remove the resistor only. This makes the circuit a simple series circuit.
2. The equivalent thevenin voltage can now be computed using the formula Id = Is(e^(kV/Tk)-1). Id is the diode current and that is 1mA, k=11,600/2 for silicon, Tk =273+25, and V is the diode bias voltage and this is the thevenin equivalent voltage which is equal to 1.4815221 Volts.
3. The equivalent thevenin resistance is equal to Vd/Id and this is equal to 1.4815221 divided by 1 mA = 1,481.5221 ohms. This is the DC equivalent resistance of the diode and this is also the thevenin equivalent resistance.
4. Draw the thevenin's equivalent circuit and reconnect the 1k resistor in the thevenin equivalent circuit.
5. Solve the voltage drop across the 1k resistor. The drop is 1.4815221 Volts x(1k/(1k+1,481.5221 ohms) = 0.5970215216 Volt.
0.5970215216 Volt is the voltage drop across the 1k resistor at room temperature and this is also the voltage drop across the diode because they are in parallel in the original circuit. This is the drop at 25 degress only - room temperature and assuming that the diode is a silicon diode, if it's germanium then divide 11,600 by 1.
The actual diode current can now be recomputed from the saturation current formula above by using the voltage across the diode as 0.5970215216 Volt.